Sfoglia per Autore
Hole capture in SiO2 films after ion implantation
1987-01-01 Neitzert, Heinrich Christoph; M., Offenberg; P., Balk
Ion-beam-induced plastic deformation: a universal behaviour of amorphous solids
1989-01-01 S., Klaumünzer; Changlin, Li; S., Löffler; M., Rammensee; G., Schumacher; Neitzert, Heinrich Christoph
Charge carrier kinetics during growth of a-Si:H layers
1989-01-01 Neitzert, Heinrich Christoph; A., Werner; M., Kunst
Nuclear reaction analysis of electronic materials, Part II: Instability analysis of a-Si:H solar cell material
1989-01-01 M. A., Briere; Neitzert, Heinrich Christoph
Hydrogen profiles of interfaces in amorphous silicon devices
1989-01-01 Neitzert, Heinrich Christoph; M., Briere
Transient photoconductivity of a-SiGe:H alloys
1991-01-01 M., Kunst; Neitzert, Heinrich Christoph; H., Rübel
Cavity formation and plastic flow of a-Si:H during heavy ion bombardment
1991-01-01 S., Klaumünzer; M., Rammensee; S., Löffler; Neitzert, Heinrich Christoph; G., Saemann Ischenko
The influence of deposition temperature and annealing temperature on the optoelectronic properties of hydrogenated amorphous silicon films
1991-01-01 M., Kunst; Neitzert, Heinrich Christoph
Transient Microwave Detected Photoconductivity as a tool for in-situ evaluation of intrinsic a-Si:H films deposited and annealed at different temperatures
1991-01-01 Neitzert, Heinrich Christoph; W., Hirsch; C., Swiatkowski; S., Schroetter; M., Kunst
Hydrogen pileup at interfaces between differently doped layers of amorphous silicon
1991-01-01 Neitzert, Heinrich Christoph; M. A., Briere; P., Lechner
In-situ characterization of a-Si:H devices during growth by microwave detected transient photoconductivity
1991-01-01 Neitzert, Heinrich Christoph; W., Hirsch; M., Kunst
Transfer of excess charge carriers in an a-Si:H/crystalline-silicon heterojunction measured during the growth of the amorphous silicon layer
1993-01-01 Neitzert, Heinrich Christoph; W., Hirsch; M., Kunst
In-situ process evaluation during hydrogen plasma etching of a-Si:H films by microwave detected transient photoconductivity measurements
1993-01-01 Neitzert, Heinrich Christoph; W., Hirsch; M., Kunst
Structural changes of a-Si:H films on crystalline silicon substrates during deposition
1993-01-01 Neitzert, Heinrich Christoph; W., Hirsch; M., Kunst
Comparison of lifetime measurements from the Zerbst and the dispersion techniques
1993-01-01 E., Klausmann; W. R., Fahrner; S., Löffler; Neitzert, Heinrich Christoph
Carrier transport in a-Si:H / a-Si:N and a-Si:H / a-Si:C multilayers
1993-01-01 J. B., Chevrier; R., Vanderhaghen; C., Swiatkowski; Neitzert, Heinrich Christoph; M., Kunst
Evaluation of the wavefunction coherence length in a waveguiding structure embedding an InGaAs/InP short-period superlattice
1993-01-01 D., Campi; C., Cacciatore; Neitzert, Heinrich Christoph; C., Rigo; C., Coriasso
Dispositivo per l’elaborazione ottica di radiazione luminose
1994-01-01 Domenico, Campi; Neitzert, Heinrich Christoph
In situ microwave reflectivity measurements of the changes in surface recombination of crystalline silicon induced by the exposure to silane, silane/helium and helium plasmas
1994-01-01 Neitzert, Heinrich Christoph; N., Layadi; P. Roca i., Cabarrocas; R., Vanderhaghen
Determination of generation lifetime in trap-rich and layered semiconductors by Metal-Oxide-Semiconductor (MOS) measurements
1994-01-01 W. R., Fahrner; S., Löffler; E., Klausmann; Neitzert, Heinrich Christoph
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