Sfoglia per Autore
Strain balance approach for optimized signal-to-noise ratio in SiGe quantum well bolometers
2009-01-01 DI BENEDETTO, Luigi; Kolahdouz, M; MALM B., G; Ostling, M; Radamson, H. H.
Selective Growth of B- and C-doped SiGe Layers in Unprocessed and Recessed Si Openings for pMOSFET Application
2009-01-01 Kolahdouz, Mohammadreza; Tabib Zadeh Adibi, Pooya; Afshar Farniya, Ali; Trybom, Erik; DI BENEDETTO, Luigi; Shayestehaminzadeh, Mohammad; Radamson, Henry H.
A Self-consistent Model of the Static and Switching Behaviour of 4H-SiC Diodes
2010-01-01 Bellone, Salvatore; francesco della, Corte; DI BENEDETTO, Luigi; loredana freda, Albanese; Licciardo, GIAN DOMENICO
Selective Growth of B- and C-Doped SiGe Layers in Unprocessed and Recessed Si Openings for p-type Metal-Oxide-Semiconductor Field-Effect Transistors Application
2010-01-01 M., Kolahdouz; P., TABIB ZADEH ADIBI; A., AFSHAR FARNIYA; S., Shayestehaminzadeh; E., Trybom; DI BENEDETTO, Luigi; AND H. H., Radamson
Improvement of infrared detection using Ge quantum dots multilayer structure
2010-01-01 Kolahdouz, M.; Farniya, A. A.; DI BENEDETTO, Luigi; Radamson, H. H.
Investigation of 4H-SiC Bipolar Mode Field Effect Transistor (BMFET) as High Power Transistor
2011-01-01 Bellone, Salvatore; Francesco G., Della Corte; DI BENEDETTO, Luigi; Licciardo, GIAN DOMENICO; Fortunato, Pezzimenti
An analytical model of the potential barrier for the ID-VGS curves calculation of 4H-SiC Bipolar JFETs
2012-01-01 Bellone, Salvatore; DI BENEDETTO, Luigi
Al+ Implanted Anode for 4H-SiC p-i-n Diodes
2012-01-01 Roberta, Nipoti; DI BENEDETTO, Luigi; C., Albonetti; Bellone, Salvatore
A Quasi-One-Dimensional Model of the Potential Barrier and Carrier Density in the Channel of Si and 4H-SiC BSITs
2012-01-01 Bellone, Salvatore; DI BENEDETTO, Luigi; Licciardo, GIAN DOMENICO
An Analytical Model of the Switching Behavior of 4H-SiC p+-n-n+ Diodes from Arbitrary Injection Conditions
2012-01-01 Bellone, Salvatore; Francesco Della, Corte; DI BENEDETTO, Luigi; Licciardo, GIAN DOMENICO
A Model of the voltage barrier in the channel of 4H-SiC normally-off JFETs
2012-01-01 DI BENEDETTO, Luigi; Bellone, Salvatore
On the Electrical Behavior of V2O5/4H-SiC Schottky Diodes
2013-01-01 Bellone, Salvatore; DI BENEDETTO, Luigi; Rubino, Alfredo
A Circuital Model of Switching Behaviour of 4H-SiC P+-N-N+ Diodes Valid at any Current and Temperature
2013-01-01 Bellone, Salvatore; Francesco Della, Corte; DI BENEDETTO, Luigi; Licciardo, GIAN DOMENICO
A Model of the ID-VGS Characteristics of Normally-Off 4H-SiC Bipolar JFETs
2014-01-01 Bellone, Salvatore; DI BENEDETTO, Luigi
A Circuital Model of Switching Behaviour of 4H-SiC p + -n-n + Diodes Valid at any Current and Temperature
2014-01-01 Bellone, Salvatore; F., Della Corte; DI BENEDETTO, Luigi; Licciardo, GIAN DOMENICO
On the Crossing-Point of 4H-SiC Power Diodes Chararacteristics
2014-01-01 DI BENEDETTO, Luigi; Licciardo, GIAN DOMENICO; Roberta, Nipoti; Bellone, Salvatore
Design and Performances of 4H−SiC Bipolar Mode Field Effect Transistor (BMFETs)
2014-01-01 Bellone, Salvatore; DI BENEDETTO, Luigi
Temperature Dependency of the Forward Characteristics of 4H-SiC DMOSFETin Presence of SiO2/SiC Interface Traps
2015-01-01 Licciardo, GIAN DOMENICO; DI BENEDETTO, Luigi; Bellone, Salvatore
Analytical prediction of the cross−over point in the temperature coefficient of the forward characteristics of 4H−SiC p+−i−n diodes
2015-01-01 DI BENEDETTO, Luigi; Licciardo, GIAN DOMENICO; Bellone, Salvatore; Nipoti, Roberta
A model of the off-behaviour of 4H–SiC power JFETs
2015-01-01 Bellone, Salvatore; DI BENEDETTO, Luigi; Licciardo, GIAN DOMENICO
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| Strain balance approach for optimized signal-to-noise ratio in SiGe quantum well bolometers | 1-gen-2009 | DI BENEDETTO, Luigi; Kolahdouz, M; MALM B., G; Ostling, M; Radamson, H. H. | |
| Selective Growth of B- and C-doped SiGe Layers in Unprocessed and Recessed Si Openings for pMOSFET Application | 1-gen-2009 | Kolahdouz, Mohammadreza; Tabib Zadeh Adibi, Pooya; Afshar Farniya, Ali; Trybom, Erik; DI BENEDETTO, Luigi; Shayestehaminzadeh, Mohammad; Radamson, Henry H. | |
| A Self-consistent Model of the Static and Switching Behaviour of 4H-SiC Diodes | 1-gen-2010 | Bellone, Salvatore; francesco della, Corte; DI BENEDETTO, Luigi; loredana freda, Albanese; Licciardo, GIAN DOMENICO | |
| Selective Growth of B- and C-Doped SiGe Layers in Unprocessed and Recessed Si Openings for p-type Metal-Oxide-Semiconductor Field-Effect Transistors Application | 1-gen-2010 | M., Kolahdouz; P., TABIB ZADEH ADIBI; A., AFSHAR FARNIYA; S., Shayestehaminzadeh; E., Trybom; DI BENEDETTO, Luigi; AND H. H., Radamson | |
| Improvement of infrared detection using Ge quantum dots multilayer structure | 1-gen-2010 | Kolahdouz, M.; Farniya, A. A.; DI BENEDETTO, Luigi; Radamson, H. H. | |
| Investigation of 4H-SiC Bipolar Mode Field Effect Transistor (BMFET) as High Power Transistor | 1-gen-2011 | Bellone, Salvatore; Francesco G., Della Corte; DI BENEDETTO, Luigi; Licciardo, GIAN DOMENICO; Fortunato, Pezzimenti | |
| An analytical model of the potential barrier for the ID-VGS curves calculation of 4H-SiC Bipolar JFETs | 1-gen-2012 | Bellone, Salvatore; DI BENEDETTO, Luigi | |
| Al+ Implanted Anode for 4H-SiC p-i-n Diodes | 1-gen-2012 | Roberta, Nipoti; DI BENEDETTO, Luigi; C., Albonetti; Bellone, Salvatore | |
| A Quasi-One-Dimensional Model of the Potential Barrier and Carrier Density in the Channel of Si and 4H-SiC BSITs | 1-gen-2012 | Bellone, Salvatore; DI BENEDETTO, Luigi; Licciardo, GIAN DOMENICO | |
| An Analytical Model of the Switching Behavior of 4H-SiC p+-n-n+ Diodes from Arbitrary Injection Conditions | 1-gen-2012 | Bellone, Salvatore; Francesco Della, Corte; DI BENEDETTO, Luigi; Licciardo, GIAN DOMENICO | |
| A Model of the voltage barrier in the channel of 4H-SiC normally-off JFETs | 1-gen-2012 | DI BENEDETTO, Luigi; Bellone, Salvatore | |
| On the Electrical Behavior of V2O5/4H-SiC Schottky Diodes | 1-gen-2013 | Bellone, Salvatore; DI BENEDETTO, Luigi; Rubino, Alfredo | |
| A Circuital Model of Switching Behaviour of 4H-SiC P+-N-N+ Diodes Valid at any Current and Temperature | 1-gen-2013 | Bellone, Salvatore; Francesco Della, Corte; DI BENEDETTO, Luigi; Licciardo, GIAN DOMENICO | |
| A Model of the ID-VGS Characteristics of Normally-Off 4H-SiC Bipolar JFETs | 1-gen-2014 | Bellone, Salvatore; DI BENEDETTO, Luigi | |
| A Circuital Model of Switching Behaviour of 4H-SiC p + -n-n + Diodes Valid at any Current and Temperature | 1-gen-2014 | Bellone, Salvatore; F., Della Corte; DI BENEDETTO, Luigi; Licciardo, GIAN DOMENICO | |
| On the Crossing-Point of 4H-SiC Power Diodes Chararacteristics | 1-gen-2014 | DI BENEDETTO, Luigi; Licciardo, GIAN DOMENICO; Roberta, Nipoti; Bellone, Salvatore | |
| Design and Performances of 4H−SiC Bipolar Mode Field Effect Transistor (BMFETs) | 1-gen-2014 | Bellone, Salvatore; DI BENEDETTO, Luigi | |
| Temperature Dependency of the Forward Characteristics of 4H-SiC DMOSFETin Presence of SiO2/SiC Interface Traps | 1-gen-2015 | Licciardo, GIAN DOMENICO; DI BENEDETTO, Luigi; Bellone, Salvatore | |
| Analytical prediction of the cross−over point in the temperature coefficient of the forward characteristics of 4H−SiC p+−i−n diodes | 1-gen-2015 | DI BENEDETTO, Luigi; Licciardo, GIAN DOMENICO; Bellone, Salvatore; Nipoti, Roberta | |
| A model of the off-behaviour of 4H–SiC power JFETs | 1-gen-2015 | Bellone, Salvatore; DI BENEDETTO, Luigi; Licciardo, GIAN DOMENICO |
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