The characterization of III-V semiconductor films by contactless and non-invasive conductance and transient photoconductance measurements in the microwave frequency range were investigated. It was shown that the conductivity (of a GaSb film) and the majority carrier mobility (of GaAs and InP films) can be determined. Besides, information on charge carrier transport, in particular at the surface is obtained.
|Titolo:||Characterization of InP and GaAs films by contactless transient photoconductivity measurements|
|Autori interni:||NEITZERT, Heinrich Christoph|
|Data di pubblicazione:||2004|
|Rivista:||THIN SOLID FILMS|
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