We report on measurements of current-resistance effects in La1−xSrxMnO3 ultrathin films deposited by molecular beam epitaxy. dc transport and voltage noise spectral density analyses have been performed in the temperature range of 10–300 K, and the results are compared with existing theoretical models. A possible connection between the explanation of the electrical transport properties and the two-level tunneling systems model, used for the voltage noise analysis, is proposed.
Unusual dependence of resistance and voltage noise on current in La1-xSrxMnO3 ultrathin films
Barone C.
Writing – Original Draft Preparation
;Galdi A.Formal Analysis
;Maritato L.Supervision
;Pagano S.Writing – Review & Editing
2007-01-01
Abstract
We report on measurements of current-resistance effects in La1−xSrxMnO3 ultrathin films deposited by molecular beam epitaxy. dc transport and voltage noise spectral density analyses have been performed in the temperature range of 10–300 K, and the results are compared with existing theoretical models. A possible connection between the explanation of the electrical transport properties and the two-level tunneling systems model, used for the voltage noise analysis, is proposed.File in questo prodotto:
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