Organic/inorganic heterojunctions have been fabricated by spin-coating of an oxadiazole based polyether on top of either n-type or p-type crystalline silicon substrates . The prepared heterodiodes showed good rectification. During currentvoltage measurements sharp current switching effects have been observed in the reverse bias characteristics for both types of heterodiodes. In particular a very stable hysteresis in the reverse characteristics of the polyether / n-type crystalline silicon has been measured at applied voltages below 1V. The application of this heterodiode as electrical memory with an on/off-ratio of about 2 orders of magnitude has been demonstrated.
Electronic memory effect in a crystalline silicon/polyether heterostructure
NEITZERT, Heinrich Christoph;CONCILIO, Simona;IANNELLI, Pio;
2010-01-01
Abstract
Organic/inorganic heterojunctions have been fabricated by spin-coating of an oxadiazole based polyether on top of either n-type or p-type crystalline silicon substrates . The prepared heterodiodes showed good rectification. During currentvoltage measurements sharp current switching effects have been observed in the reverse bias characteristics for both types of heterodiodes. In particular a very stable hysteresis in the reverse characteristics of the polyether / n-type crystalline silicon has been measured at applied voltages below 1V. The application of this heterodiode as electrical memory with an on/off-ratio of about 2 orders of magnitude has been demonstrated.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
