The monitoring of the microwave reflection changes after pulsed laser illumination enables the in-situ characterization of important optical and electrical material parameters during the growth of intrinsic hydrogenated amorphous silicon on low conductivity substrates.
Initial Growth Of Thin Hydrogenated Amorphous Silicon Layer On Low Conductivity Substrates Monitored By In-situ Transient Microwave Photoconductivity Measurements
NEITZERT, Heinrich Christoph;
2009-01-01
Abstract
The monitoring of the microwave reflection changes after pulsed laser illumination enables the in-situ characterization of important optical and electrical material parameters during the growth of intrinsic hydrogenated amorphous silicon on low conductivity substrates.File in questo prodotto:
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