The effect of oxygen annealing on the structural and transport properties of La0.7Ca0.3MnO3 thin films deposited on SrTiO3 substrates has been investigated by x-ray diffraction analysis and resistive measurements. The as-grown films are fully tensile strained on the substrates and show a depressed metal-insulator transition temperature T-p= 131 K. As the oxygen content is increased due to longer annealing times, significantly higher T-p are measured, up to 247 K. Correspondingly, an increase of the out-of-plane lattice parameter is observed while the in-plane lattice constants do not change with respect to the as-grown films, which prevents any interpretation of a T-p dependence on the strain. The large increase in T-p is then interpreted in terms of a combined effect of the Mn4+/Mn3+ ratio variation, the change in the carrier density in the a-b planes, and the increase in the hydrostatic strain with the oxygen annealing.

Metal-insulator transition temperature enhancement in La0.7Ca0.3MnO3 thin films

SALVATO, Matteo;VECCHIONE, ANTONIO;DE SANTIS, Adele;BOBBA, Fabrizio;CUCOLO, Anna Maria
2005-01-01

Abstract

The effect of oxygen annealing on the structural and transport properties of La0.7Ca0.3MnO3 thin films deposited on SrTiO3 substrates has been investigated by x-ray diffraction analysis and resistive measurements. The as-grown films are fully tensile strained on the substrates and show a depressed metal-insulator transition temperature T-p= 131 K. As the oxygen content is increased due to longer annealing times, significantly higher T-p are measured, up to 247 K. Correspondingly, an increase of the out-of-plane lattice parameter is observed while the in-plane lattice constants do not change with respect to the as-grown films, which prevents any interpretation of a T-p dependence on the strain. The large increase in T-p is then interpreted in terms of a combined effect of the Mn4+/Mn3+ ratio variation, the change in the carrier density in the a-b planes, and the increase in the hydrostatic strain with the oxygen annealing.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11386/3668077
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 28
  • ???jsp.display-item.citation.isi??? 27
social impact