We compare the tunneling behavior of artificial Y(Ho)BaCuO-based HTS-I-HTS trilayers with our previous data obtained in YBaCuO/Pb junctions with natural barriers. Y2O3, SrTiO3 and PrBa2Cu3O7-delta have been used as insulating layers in the MTS-based heterostructures that, investigated by X-ray and HREM TEM analysis, all showed good structural properties. However, we cannot exclude spurious effects due to the critical interface formation with the Y(Ho)BaCuO superconducting electrodes in the tunneling characteristics of the Y2O3, SrTiO3 trilayers. For the YBa2Cu3O7-delta/PrBa2Cu3O7-delta/HoBa2Cu3O7-delta junctions, we have found quasi-ideal conductance characteristics with maxima at V = +/- 40 mV. These values well relate to the +/- 20 mV structures measured in YBaCuO/Pb junctions with natural barriers. The low values of the G(0)/G(100 mV)approximate to 0.05 and the flat background conductances measured in the artificial junctions, seem to confirm better defined interfaces in these structures with CuO2 planes facing the barrier insulating layer.

Different tunnel barriers for c-axis oriented Y(Ho)BaCuO based trilayer heterostructures

CUCOLO, Anna Maria
1998-01-01

Abstract

We compare the tunneling behavior of artificial Y(Ho)BaCuO-based HTS-I-HTS trilayers with our previous data obtained in YBaCuO/Pb junctions with natural barriers. Y2O3, SrTiO3 and PrBa2Cu3O7-delta have been used as insulating layers in the MTS-based heterostructures that, investigated by X-ray and HREM TEM analysis, all showed good structural properties. However, we cannot exclude spurious effects due to the critical interface formation with the Y(Ho)BaCuO superconducting electrodes in the tunneling characteristics of the Y2O3, SrTiO3 trilayers. For the YBa2Cu3O7-delta/PrBa2Cu3O7-delta/HoBa2Cu3O7-delta junctions, we have found quasi-ideal conductance characteristics with maxima at V = +/- 40 mV. These values well relate to the +/- 20 mV structures measured in YBaCuO/Pb junctions with natural barriers. The low values of the G(0)/G(100 mV)approximate to 0.05 and the flat background conductances measured in the artificial junctions, seem to confirm better defined interfaces in these structures with CuO2 planes facing the barrier insulating layer.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11386/3672877
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