A circuital model of 4H-SiC p+-n-n+ diodes is presented, which is able to describe the switching behaviour of the devices in a wide range of current, voltage and temperature, at an arbitrary instant, with comparable accuracy of numerical simulations. The model has been analytically derived under generic conditions and is capable to calculate also the dynamic spatial distribution of minority carriers in the epitaxial layer. The accuracy of the model is shown by comparisons with numerical simulations and experime ntal measurements.
A Circuital Model of Switching Behaviour of 4H-SiC P+-N-N+ Diodes Valid at any Current and Temperature
BELLONE, Salvatore;DI BENEDETTO, LUIGI;LICCIARDO, GIAN DOMENICO
2013-01-01
Abstract
A circuital model of 4H-SiC p+-n-n+ diodes is presented, which is able to describe the switching behaviour of the devices in a wide range of current, voltage and temperature, at an arbitrary instant, with comparable accuracy of numerical simulations. The model has been analytically derived under generic conditions and is capable to calculate also the dynamic spatial distribution of minority carriers in the epitaxial layer. The accuracy of the model is shown by comparisons with numerical simulations and experime ntal measurements.File in questo prodotto:
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