A detailed characterization of the voltage-noise properties has been performed in FeTe0.5Se0.5 epitaxial thin films and Co-doped BaFe2As2 bilayers, deposited by pulsed laser deposition. In all the samples analyzed, the experimental voltage-spectral density has a 1/f noise component. Different behaviors are observed for the bias current and temperature dependencies of this 1/f noise, and are related to specific structural and electric transport properties of the two materials.
Temperature-dependent electric noise level in different iron-based superconductors
Barone C.
Writing – Original Draft Preparation
;Pagano S.Writing – Review & Editing
;
2014-01-01
Abstract
A detailed characterization of the voltage-noise properties has been performed in FeTe0.5Se0.5 epitaxial thin films and Co-doped BaFe2As2 bilayers, deposited by pulsed laser deposition. In all the samples analyzed, the experimental voltage-spectral density has a 1/f noise component. Different behaviors are observed for the bias current and temperature dependencies of this 1/f noise, and are related to specific structural and electric transport properties of the two materials.File in questo prodotto:
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