In this paper we carry out a theoretical and experimental study of the nature of graphene/ (3D/2D)-semiconductor Schottky contact. We use quantum statistical theory to derive a simple and parameter-free carrier transport model of graphene/ (3D/2D)-semiconductor Schottky contact, which is validated by the quantum Landauer theory and First-principle calculations. The proposed model can well explain experimental results for large samples of different types of graphene/ (3D/2D)-semiconductor Schottky contact.

A new perspective on the nature of graphene- semiconductor (3D/2D) Schottky contact: A combined theoretical and experimental approach

DI BARTOLOMEO, Antonio;
2016-01-01

Abstract

In this paper we carry out a theoretical and experimental study of the nature of graphene/ (3D/2D)-semiconductor Schottky contact. We use quantum statistical theory to derive a simple and parameter-free carrier transport model of graphene/ (3D/2D)-semiconductor Schottky contact, which is validated by the quantum Landauer theory and First-principle calculations. The proposed model can well explain experimental results for large samples of different types of graphene/ (3D/2D)-semiconductor Schottky contact.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11386/4675718
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