In this paper we carry out a theoretical and experimental study of the nature of graphene/semiconductor Schottky contact. We present a simple and parameter-free carrier transport model of graphene/semiconductor Schottky contact derived from quantum statistical theory, which is validated by the quantum Landauer theory and first-principle calculations. The proposed model can well explain experimental results for samples of different types of graphene/semiconductor Schottky contact. INTRODUCTION

A modified Schottky model for graphene-semiconductor (3D/2D) contact: A combined theoretical and experimental study

DI BARTOLOMEO, Antonio;
2016-01-01

Abstract

In this paper we carry out a theoretical and experimental study of the nature of graphene/semiconductor Schottky contact. We present a simple and parameter-free carrier transport model of graphene/semiconductor Schottky contact derived from quantum statistical theory, which is validated by the quantum Landauer theory and first-principle calculations. The proposed model can well explain experimental results for samples of different types of graphene/semiconductor Schottky contact. INTRODUCTION
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11386/4683249
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