A proportional to absolute temperature sensor (PTAT) based on V2O5/4H-SiC (vanadium pentoxide/4H polytype of silicon carbide) Schottky diodes is presented. The linear dependence on temperature of the voltage difference appearing at the terminals of two constant-current forward-biased diodes has been used for thermal sensing in the wide temperature range from T = 147 K to 400 K which extends down the state-of-the art of more than 80K. The proposed sensor shows a sensitivity of 307uV/K, a good reproducibility and a stable linear output also in case of deviation of the two bias currents from the best operating condition.
A V 2 O 5 /4H-SiC Schottky diode-based PTAT sensor operating in a wide range of bias currents
Di Benedetto, Luigi;Rubino, Alfredo;Licciardo, Gian Domenico;
2018-01-01
Abstract
A proportional to absolute temperature sensor (PTAT) based on V2O5/4H-SiC (vanadium pentoxide/4H polytype of silicon carbide) Schottky diodes is presented. The linear dependence on temperature of the voltage difference appearing at the terminals of two constant-current forward-biased diodes has been used for thermal sensing in the wide temperature range from T = 147 K to 400 K which extends down the state-of-the art of more than 80K. The proposed sensor shows a sensitivity of 307uV/K, a good reproducibility and a stable linear output also in case of deviation of the two bias currents from the best operating condition.File in questo prodotto:
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Descrizione: The editorial file is available at the following link https://doi.org/10.1016/j.sna.2017.11.026. It is copyrighted by Elsevier Inc.
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