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In situ microwave reflectivity measurements of the changes in surface recombination of crystalline silicon induced by the exposure to silane, silane/helium and helium plasmas 1-gen-1994 Neitzert, Heinrich Christoph; N., Layadi; P. Roca i., Cabarrocas; R., Vanderhaghen
Determination of generation lifetime in trap-rich and layered semiconductors by Metal-Oxide-Semiconductor (MOS) measurements 1-gen-1994 W. R., Fahrner; S., Löffler; E., Klausmann; Neitzert, Heinrich Christoph
Polarization-independent InGaAsP/InGaAsP MQW waveguide electro-absorption modulator 1-gen-1994 D., Campi; C., Cacciatore; Neitzert, Heinrich Christoph; C., Coriasso; C., Rigo; A., Stano
Metal-Oxide-Semiconductor capacitance measurements on amorphous silicon 1-gen-1994 Neitzert, Heinrich Christoph; S., Löffler; E., Klausmann; W. R., Fahrner
Optically-multistable operation of a waveguide device based on the Wannier-Stark effect in an InGaAs/InP superlattice 1-gen-1994 Neitzert, Heinrich Christoph; D., Campi; C., Cacciatore; C., Rigo; A., Stano; C., Coriasso
Optimization of growth parameters of short period InGaAs/InP superlattices for Wannier-Stark modulators 1-gen-1994 C., Rigo; D., Campi; Neitzert, Heinrich Christoph; L., Lazzarini; G., Salviati
Dispositif de Traitement Optique pour Radiations Lumineuses 1-gen-1995 Neitzert, Heinrich Christoph; Domenico, Campi
Optical processing device for light radiation 1-gen-1995 Domenico, Campi; Neitzert, Heinrich Christoph
Waveguiding structure exhibiting various non-linear optical transfer functions realized with a Wannier-Stark modulator containing an InGaAs/InP superlattice 1-gen-1995 Neitzert, Heinrich Christoph; C., Cacciatore; D., Campi; C., Rigo
Self-Electrooptic Effect Device in waveguiding configuration as optical switch and power discriminator 1-gen-1995 Neitzert, Heinrich Christoph; C., Cacciatore; D., Campi; C., Rigo
In-situ thickness control during plasma deposition of hydrogenated amorphous silicon films by time resolved microwave conductivity measurements 1-gen-1995 Neitzert, Heinrich Christoph; W., Hirsch; M., Kunst; M. E. A., Nell
In-situ measurements of changes in the structure and in the excess charge carrier kinetics at the silicon surface during hydrogen and helium plasma exposure 1-gen-1995 Neitzert, Heinrich Christoph; N., Layadi; P. Roca i., Cabarrocas; R., Vanderhaghen; M., Kunst
In-situ measurements of changes of the excess charge carrier decay rate at the crystalline silicon surface during low temperature annealing and cooling 1-gen-1995 Neitzert, Heinrich Christoph; W., Hirsch
InGaAs/InP superlattice electro-absorption waveguide modulator 1-gen-1995 Neitzert, Heinrich Christoph; C., Cacciatore; D., Campi; C., Rigo; C., Coriasso; A., Stano
Laser pulse induced microwave conductivity and spectroscopic ellipsometry characterization of helium and hydrogen plasma damage of the crystalline silicon surface 1-gen-1995 Neitzert, Heinrich Christoph; N., Layadi; P. Roca i., Cabarrocas; R., Vanderhaghen; M., Kunst
In-situ measurements of the recombination at the crystalline silicon / amorphous silicon heterointerface by time resolved microwave conductivity measurements during low temperature annealing and silane plasma exposure 1-gen-1995 Neitzert, Heinrich Christoph; M., Kunst
Anomalous photoresponse behaviour and reliability of InGaAs/InP based avalanche photodiodes 1-gen-1996 P., Montangero; G. A., Azzini; Neitzert, Heinrich Christoph; L., Ricci; L., Serra
Electroluminescence imaging for defect characterization in InP based optoelectronic devices 1-gen-1996 Neitzert, Heinrich Christoph; V., Cappa; S., Massetti
High temperature stability and electrostatic discharge sensibility of InGaAs/InP avalanche photodetectors 1-gen-1997 Neitzert, Heinrich Christoph; V., Cappa
Leakage current detection in InGaAsP laser diodes by imaging of the optical emission within the confining InP layers 1-gen-1997 S., Masssetti; V., Cappa; Neitzert, Heinrich Christoph
Mostrati risultati da 21 a 40 di 249
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