UniSa - IRIS Institutional Research Information System

IEMMO, LAURA
 Distribuzione geografica
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Continente #
EU - Europa 68
NA - Nord America 21
AS - Asia 5
AF - Africa 2
Totale 96
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Nazione #
FI - Finlandia 22
IT - Italia 22
US - Stati Uniti d'America 21
FR - Francia 16
BY - Bielorussia 3
IN - India 3
NG - Nigeria 2
NL - Olanda 2
DE - Germania 1
HK - Hong Kong 1
IE - Irlanda 1
JP - Giappone 1
PL - Polonia 1
Totale 96
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Città #
Lappeenranta 18
Salerno 6
Columbus 5
Ashburn 4
Council Bluffs 3
Naples 3
Boardman 2
Espoo 2
Genoa 2
Helsinki 2
Palermo 2
Port Harcourt 2
Strasbourg 2
Trecate 2
Amsterdam 1
Bengaluru 1
Casal di Principe 1
Central 1
Dayton 1
Eygelshoven 1
Fleming Island 1
Gerbrunn 1
Hyderabad 1
Montoro 1
Pune 1
Rome 1
Wroclaw 1
Totale 68
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Nome #
Asymmetric Schottky Contacts in Bilayer MoS2 Field Effect Transistors, file e2915b35-c0a6-8981-e053-6605fe0a83a3 22
A WSe2 vertical field emission transistor, file e2915b35-9615-8981-e053-6605fe0a83a3 21
Leakage and field emission in side-gate graphene field effect transistors, file e2915b35-0b50-8981-e053-6605fe0a83a3 11
Graphene/Silicon Schottky diodes for photodetection, file e2915b32-cdc5-8981-e053-6605fe0a83a3 9
Hysteresis in the transfer characteristics of MoS2 transistors, file e2915b35-c0a8-8981-e053-6605fe0a83a3 7
Effect of temperature and morphology on the electrical properties of PET/conductive nanofillers composites, file e2915b35-90b9-8981-e053-6605fe0a83a3 5
Graphene field effect transistors with niobium contacts and asymmetric transfer characteristics, file e2915b35-c1ed-8981-e053-6605fe0a83a3 5
Pressure‐Tunable Ambipolar Conduction and Hysteresis in Thin Palladium Diselenide Field Effect Transistors, file e2915b35-840b-8981-e053-6605fe0a83a3 4
Pressure‐Tunable Ambipolar Conduction and Hysteresis in Thin Palladium Diselenide Field Effect Transistors, file e2915b34-affe-8981-e053-6605fe0a83a3 3
Graphene-silicon Schottky heterojunctions for optoelectronic applications, file e2915b33-6cc5-8981-e053-6605fe0a83a3 2
Asymmetric Schottky Contacts in Bilayer MoS2 Field Effect Transistors, file e2915b34-e8d2-8981-e053-6605fe0a83a3 2
Leakage and field emission in side-gate graphene field effect transistors, file e2915b32-20ad-8981-e053-6605fe0a83a3 1
The role of the substrate in Graphene/Silicon photodiodes, file e2915b33-13a9-8981-e053-6605fe0a83a3 1
Effect of temperature and morphology on the electrical properties of PET/conductive nanofillers composites, file e2915b33-2582-8981-e053-6605fe0a83a3 1
MoS2 and WSe2 in field effect transistors, file e2915b33-8389-8981-e053-6605fe0a83a3 1
Nanotip Contacts for Electric Transport and Field Emission Characterization of Ultrathin MoS2 Flakes, file e2915b33-effa-8981-e053-6605fe0a83a3 1
Totale 96
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Categoria #
all - tutte 429
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 429
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20215 0 0 0 0 0 0 0 2 3 0 0 0
2021/20222 0 0 0 0 0 0 0 0 0 0 1 1
2022/202329 1 2 3 2 1 7 3 1 1 2 5 1
2023/202458 3 6 1 1 2 2 7 11 0 19 6 0
Totale 96