Contactless time resolved photoconductivity measurements, based on microwave reflection changes after short laser pulse illumination, have been performed during the growth of thin films of hydrogenated amorphous silicon on glass and crystalline silicon substrates. Following the development of some basic microwave reflection transient parameters, like signal amplitude and relative lifetime, it can be shown, that the new in-situ technique enables the optimization of various aspects of thin film plasma deposition processes. An optimization of plasma parameters during the deposition of a-Si:H multilayers, the investigation of the kinetics of the interface formation between crystalline and amorphous silicon layers and the thickness optimization of antireflective coatings are possible using this new in-situ measurement technique.
|Titolo:||In-situ Characterization of Silicon based thin film growth and interface formation by contactless transient photoconductivity measurements|
|Autori interni:||NEITZERT, Heinrich Christoph|
|Data di pubblicazione:||2005|
|Appare nelle tipologie:||4.1.2 Proceedings con ISBN|