Low resistivity (5×10−4Ω cm) and high transmittance (T > 82 %) ZnO films have been obtained by RF magnetron sputtering deposition of ZnO/Al2O3 (2.5 % wt.) target. The doped oxide films have been investigated by optical and electrical measurements and by scanning electron microscopy. The optimized recipes have been applied to the realisation of amorphous p-i-n solar cells back reflector in the structure: TCO/pin/ZnO/Ag. The application of ZnO/Ag leads to an increase of the Jsc current of about 13% but a poorer fill factor steadily affects the characteristics of the devices. We demonstrate that a thicker n+ layer of about three times the standard one is effective in driving the FF toward the normal values. The cells' behaviour has been ascribed to a thinning of the n+ layer resulting from a sputtering action of energetic oxygen atoms during the ZnO deposition process. This effect has been evidenced by measuring the absorbance of SnO2/a-Si (20 nm) /ZnO in comparison with SnO2/a-Si (20 nm) structure.

The Effect of ZnO Sputtering Deposition Parameters on the Performances of Back Reflector Enhanced Amorphous Silicon Solar Cells

RUBINO, Alfredo;
1995

Abstract

Low resistivity (5×10−4Ω cm) and high transmittance (T > 82 %) ZnO films have been obtained by RF magnetron sputtering deposition of ZnO/Al2O3 (2.5 % wt.) target. The doped oxide films have been investigated by optical and electrical measurements and by scanning electron microscopy. The optimized recipes have been applied to the realisation of amorphous p-i-n solar cells back reflector in the structure: TCO/pin/ZnO/Ag. The application of ZnO/Ag leads to an increase of the Jsc current of about 13% but a poorer fill factor steadily affects the characteristics of the devices. We demonstrate that a thicker n+ layer of about three times the standard one is effective in driving the FF toward the normal values. The cells' behaviour has been ascribed to a thinning of the n+ layer resulting from a sputtering action of energetic oxygen atoms during the ZnO deposition process. This effect has been evidenced by measuring the absorbance of SnO2/a-Si (20 nm) /ZnO in comparison with SnO2/a-Si (20 nm) structure.
1558992804
9781558992801
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11386/3203477
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