In this paper, the fabrication of thin film transistor based on randomized network of single walled carbon nano tubes (SWCNTs-TFT) is presented. The randomized network is obtained by deposition of dispersed SWCNTs on the substrate with a novel technique combining vacuum filtration and silanization of substrate. This approach, which is compatible with all kind of substrates, allows a fabrication process at room temperature that is capable to overcome the high temperature procedure for CNTs deposition. The drain and source electrodes of the TFT are based on an interdigitated electrode (IDE) with 8μm channel length and 3mm channel width. The obtained device shows output performance with an apparent mobility of 40.7 cm2/Vs, current density 0.05 μA/μm and ION /IOFF ratio 2×103• A comparison of the model describing the SWCNTs-TFT with that of (metal-oxide-semiconductor) MOS-like device confirms a p-type behavior. The proposed approach can be easily transformed to large areas leading to a suitable use in low cost industrial application. © 2013 IEEE.
Feasible industrial fabrication of thin film transistor based on randomized network of single walled carbon nanotubes
LAMBERTI, PATRIZIA;TUCCI, Vincenzo;
2013-01-01
Abstract
In this paper, the fabrication of thin film transistor based on randomized network of single walled carbon nano tubes (SWCNTs-TFT) is presented. The randomized network is obtained by deposition of dispersed SWCNTs on the substrate with a novel technique combining vacuum filtration and silanization of substrate. This approach, which is compatible with all kind of substrates, allows a fabrication process at room temperature that is capable to overcome the high temperature procedure for CNTs deposition. The drain and source electrodes of the TFT are based on an interdigitated electrode (IDE) with 8μm channel length and 3mm channel width. The obtained device shows output performance with an apparent mobility of 40.7 cm2/Vs, current density 0.05 μA/μm and ION /IOFF ratio 2×103• A comparison of the model describing the SWCNTs-TFT with that of (metal-oxide-semiconductor) MOS-like device confirms a p-type behavior. The proposed approach can be easily transformed to large areas leading to a suitable use in low cost industrial application. © 2013 IEEE.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
