We discuss several features of MoS2 back-gate transistors with ohmic or Schottky contacts. We investigate important phenomena such as hysteresis, persistent conductivity and field emission of mono or bilayer MoS2.
MoS2 transistors with ohmic or Schottky contacts
DI BARTOLOMEO, ANTONIO
Writing – Original Draft Preparation
;GIUBILEO, FILIPPOInvestigation
;GRILLO, ALESSANDROInvestigation
;IEMMO, lAURAInvestigation
;lUONGO, GIUSEPPEInvestigation
;URBAN, FRANCESCAResources
2018-01-01
Abstract
We discuss several features of MoS2 back-gate transistors with ohmic or Schottky contacts. We investigate important phenomena such as hysteresis, persistent conductivity and field emission of mono or bilayer MoS2.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
