In this paper we report on the performance of 4H-SiC bipolar diodes as temperature sensors far beyond 273K. The sensor is measured from 150K to 445K covering a temperature range of 295K. In this operating temperature range, the sensor characteristic VD-T is highly linear and it is dominated by the typical dependence of the p-i-n diode voltage on the temperature. The sensor sensitivity is-4.48mV/K for a diode current of 2nA with a maximum error of 4.3K across the full temperature range. Although 4H-SiC p-i-n are mainly focused on very high temperature applications, our analysis on the performance of bipolar diodes at low temperatures highlights its feasibility as temperature sensor for aerospace and high altitude applications where cryogenic temperatures are achieved.
Performance of 4H-SIC bipolar diodes as temperature sensor at low temperatures
Di Benedetto L.;Licciardo G. D.;Rubino A.;
2019-01-01
Abstract
In this paper we report on the performance of 4H-SiC bipolar diodes as temperature sensors far beyond 273K. The sensor is measured from 150K to 445K covering a temperature range of 295K. In this operating temperature range, the sensor characteristic VD-T is highly linear and it is dominated by the typical dependence of the p-i-n diode voltage on the temperature. The sensor sensitivity is-4.48mV/K for a diode current of 2nA with a maximum error of 4.3K across the full temperature range. Although 4H-SiC p-i-n are mainly focused on very high temperature applications, our analysis on the performance of bipolar diodes at low temperatures highlights its feasibility as temperature sensor for aerospace and high altitude applications where cryogenic temperatures are achieved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
