We fabricate monolayer MoS2 field effect transistors and study their electrical characteristics from 10−6 Torr to atmospheric air pressure. We show that the threshold voltage increases for growing pressure. Hence, we propose the transistors as air pressure sensors, showing that they are suitable as low-power vacuum gauges. The devices operate on the pressure-dependent O2, N2 and H2O molecule adsorption that affects the n-doping of the MoS2 channel.

Vacuum Gauge from Ultrathin MoS2 Transistor

Di Bartolomeo, A.
Writing – Original Draft Preparation
;
Pelella, A.
Investigation
;
Grillo, A.
Investigation
;
Urban, F.
Formal Analysis
;
Iemmo, L.
Validation
;
Faella, E.
Investigation
;
Martucciello, N.
Formal Analysis
;
Giubileo, F.
Formal Analysis
2021-01-01

Abstract

We fabricate monolayer MoS2 field effect transistors and study their electrical characteristics from 10−6 Torr to atmospheric air pressure. We show that the threshold voltage increases for growing pressure. Hence, we propose the transistors as air pressure sensors, showing that they are suitable as low-power vacuum gauges. The devices operate on the pressure-dependent O2, N2 and H2O molecule adsorption that affects the n-doping of the MoS2 channel.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11386/4765706
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