One dimensional model for the duration of the high breakdown phase in deep depletion power devices

The paper presents a one dimensional model of the duration of the increased breakdown voltage phase in Deep Depletion power devices. The model includes the effect of bulk generation and space charge generation and is verified against numerical simulations of a Si-BOX-Si structure. The model is compared with experimental results regarding the duration of the increased breakdown voltage phase in a power LDMOS in SOI technology. The results show that the interface states are probably the limiting factor for the duration of the increased breakdown voltage phase.