Two-dimensional analytical models for the calculation of the electric field distribution in superjunction power semiconductor devices are presented in this paper. The models show how to analytically calculate the electric field in superjunction devices and give a deep insight in the design of superjunction structures. Numerical two-dimensional simulations validate the proposed models.
Analytical models for electric field in superjunction power devices
E. Napoli
2009-01-01
Abstract
Two-dimensional analytical models for the calculation of the electric field distribution in superjunction power semiconductor devices are presented in this paper. The models show how to analytically calculate the electric field in superjunction devices and give a deep insight in the design of superjunction structures. Numerical two-dimensional simulations validate the proposed models.File in questo prodotto:
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