Circuital implementation of deep depletion SOI power devices

Circuit implementations of deep depletion SOI devices are presented in this paper. Chosen switching topologies are a class E converter and a ZVS resonant step down converter. The newly proposed devices, named deep depletion devices, feature transient breakdown voltage higher than static breakdown voltage and are therefore ideally suited to those circuit implementations in which the maximum voltage applies to the power switch for a limited amount of time. Mixed-mode simulations of the circuits show that the proposed class of power devices can be profitably used in resonant power electronic circuits topologies.