While there are several analytical models dedicated to the vertical IGBT there is virtually no reliable model for the Lateral IGBT (LIGBT). LIGBTs are increasingly popular in smart power and power integrated circuits, especially in those applications where high voltage and high current capabilities are required. Silicon on insulator (SOI) could be the future technology for power devices and integrated circuits due to its much improved device isolation. In this work we report for the first time a complete analytical model for the SOI LIGBT based on semiconductor physics with very few fitting parameters. The model is assessed against finite element device simulations and experimental results.

Complete Isothermal Model for the Lateral Insulated Gate Bipolar Transistor on SOI technology

NAPOLI, ETTORE;
2005

Abstract

While there are several analytical models dedicated to the vertical IGBT there is virtually no reliable model for the Lateral IGBT (LIGBT). LIGBTs are increasingly popular in smart power and power integrated circuits, especially in those applications where high voltage and high current capabilities are required. Silicon on insulator (SOI) could be the future technology for power devices and integrated circuits due to its much improved device isolation. In this work we report for the first time a complete analytical model for the SOI LIGBT based on semiconductor physics with very few fitting parameters. The model is assessed against finite element device simulations and experimental results.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11386/4772751
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 2
  • ???jsp.display-item.citation.isi??? 0
social impact