The paper presents an analytic bidimensional model for breakdown voltage of recently proposed superjunction structures. The bidimensional model is able to correctly estimate electric field and breakdown voltage giving an insight in optimal design of superjunction devices. Further, in the paper it is shown that simplified formulas based on one-dimensional approximations overestimate breakdown voltage up to a factor two.

Analytical modeling of breakdown voltage of superjunction power devices

E. NAPOLI
2000-01-01

Abstract

The paper presents an analytic bidimensional model for breakdown voltage of recently proposed superjunction structures. The bidimensional model is able to correctly estimate electric field and breakdown voltage giving an insight in optimal design of superjunction devices. Further, in the paper it is shown that simplified formulas based on one-dimensional approximations overestimate breakdown voltage up to a factor two.
2000
8001021955
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11386/4772760
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