The paper presents an analytic bidimensional model for breakdown voltage of recently proposed superjunction structures. The bidimensional model is able to correctly estimate electric field and breakdown voltage giving an insight in optimal design of superjunction devices. Further, in the paper it is shown that simplified formulas based on one-dimensional approximations overestimate breakdown voltage up to a factor two.

Analytical modeling of breakdown voltage of superjunction power devices

E. NAPOLI
2000

Abstract

The paper presents an analytic bidimensional model for breakdown voltage of recently proposed superjunction structures. The bidimensional model is able to correctly estimate electric field and breakdown voltage giving an insight in optimal design of superjunction devices. Further, in the paper it is shown that simplified formulas based on one-dimensional approximations overestimate breakdown voltage up to a factor two.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11386/4772760
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