A complete physical model for the Lateral IGBT in Thin Silicon On Insulator technology is presented for the first time. The model is oriented to circuit simulators and is implemented in Pspice. Model results are compared against experimental results and Medici numerical simulations. Numerical convergence performance of the model is verified through the simulation of a half bridge circuit and a complete flyback switch mode power supply.
A compact model for thin SOI LIGBTs: description, experimental verification and system application
NAPOLI, ETTORE;
2005-01-01
Abstract
A complete physical model for the Lateral IGBT in Thin Silicon On Insulator technology is presented for the first time. The model is oriented to circuit simulators and is implemented in Pspice. Model results are compared against experimental results and Medici numerical simulations. Numerical convergence performance of the model is verified through the simulation of a half bridge circuit and a complete flyback switch mode power supply.File in questo prodotto:
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