The paper presents a novel rectifier structure based on superjunction technique, the Superjunction Merged PiN Schottky diode. Optimal diode design is obtained exploiting a two-dimensional analytical model, able to correctly estimate electric field, for the calculation of breakdown voltage of power superjunction devices. Device performances are analyzed with 2D numerical simulations and compared to standard PiN and Schottky diodes.

Design consideration of 1000V Merged PiN Schottky diode using Superjunction sustaining layer

E. NAPOLI;
2001

Abstract

The paper presents a novel rectifier structure based on superjunction technique, the Superjunction Merged PiN Schottky diode. Optimal diode design is obtained exploiting a two-dimensional analytical model, able to correctly estimate electric field, for the calculation of breakdown voltage of power superjunction devices. Device performances are analyzed with 2D numerical simulations and compared to standard PiN and Schottky diodes.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11386/4772771
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