The superjunction concept allows the design of power semiconductor devices with improved performances compared to conventional sustaining layers. Due to the lack of accurate analytical models to characterize superjunction devices the design phase is still based on numerous and time consuming finite element simulations. In this paper a closed form analytical solution for the calculation of the breakdown voltage of a superjunction symmetric and charge balanced diode, is presented. The calculation of the breakdown voltage is based on the approximated solution of the ionization integral. The proposed solution is based on the Taylor expansion coupled with Newton Raphson algorithm.
Analytical calculation of the breakdown voltage for balanced, symmetrical superjunction power devices
E. Napoli;
2010-01-01
Abstract
The superjunction concept allows the design of power semiconductor devices with improved performances compared to conventional sustaining layers. Due to the lack of accurate analytical models to characterize superjunction devices the design phase is still based on numerous and time consuming finite element simulations. In this paper a closed form analytical solution for the calculation of the breakdown voltage of a superjunction symmetric and charge balanced diode, is presented. The calculation of the breakdown voltage is based on the approximated solution of the ionization integral. The proposed solution is based on the Taylor expansion coupled with Newton Raphson algorithm.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
