Time Resolved Microwave Conductivity (TRMC) as a contactless technique for the characterization of the charge carrier kinetics in photoconductive materials has been recently successfully applied for the characterization of perovskite thin films. Charge carrier lifetimes depend strongly on excitation conditions, such as light intensity and wavelength. It is shown, how TRMC-measurements performed with excitation at low laser intensities and different wavelengths can give valuable information on the quality of the surface passivation of triple-cation, triple-anion Perovskite films by PEAI layers. A good correlation of the observed lifetime increase in the absorber films and the performance of the completed solar cells has been found. The results are compared to the characterization under identical measurement conditions of crystalline silicon wafers. Also in this case the influence of different passivation schemes on the charge carrier lifetime and on solar cell properties have been compared.

Comparison of the application of the TRMC technique for the characterization of crystalline silicon and perovskite solar cell absorber material and efficient surface passivation control

A. Singh;H. C. Neitzert
2024-01-01

Abstract

Time Resolved Microwave Conductivity (TRMC) as a contactless technique for the characterization of the charge carrier kinetics in photoconductive materials has been recently successfully applied for the characterization of perovskite thin films. Charge carrier lifetimes depend strongly on excitation conditions, such as light intensity and wavelength. It is shown, how TRMC-measurements performed with excitation at low laser intensities and different wavelengths can give valuable information on the quality of the surface passivation of triple-cation, triple-anion Perovskite films by PEAI layers. A good correlation of the observed lifetime increase in the absorber films and the performance of the completed solar cells has been found. The results are compared to the characterization under identical measurement conditions of crystalline silicon wafers. Also in this case the influence of different passivation schemes on the charge carrier lifetime and on solar cell properties have been compared.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11386/4858971
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? ND
social impact