Sfoglia per Rivista IEEE ELECTRON DEVICE LETTERS
A Measurement Method of the Injection Level Dependence of the Conductivity Mobility in Silicon
1995-01-01 Bellone, Salvatore; GIAN VITO, Persiano; ANTONIO G. M., Strollo
An Analysis of Thermal Behaviour of Bipolar-Mode JFET's
1983-01-01 Bellone, Salvatore; Antonio, Caruso; Giovanni, Scarpetta; Paolo, Spirito; G. F., Vitale
Design of IGBT with Integral Freewheeling Diode
2002-01-01 Napoli, Ettore; Spirito, Paolo; Strollo, ANTONIO GIUSEPPE MARIA; F., Frisina; L., Fragapane; D., Fagone
Detection of Recombination Centers in Epitaxial Layers by Temperature Scanning and Depth Lifetime Profiling
1991-01-01 Bellone, Salvatore; Paolo, Spirito
Duration of the High Breakdown Voltage Phase in Deep Depletion SOI LDMOS
2007-01-01 Napoli, Ettore
The Effect of Charge Imbalance on Superjunction Power Devices: An Exact Analytical Solution
2008-01-01 Napoli, Ettore; H., Wang; F., Udrea
Experimental measurements of Majority and Minority Carrier Lifetime Profile in Si- epilayers by the use of an improved OCVD method
2005-01-01 Bellone, Salvatore; Licciardo, GIAN DOMENICO; S., Daliento; L., Mele
High-Voltage Bipolar Model JFET with normally-off Characteristics
1985-01-01 Bellone, Salvatore; Antonio, Caruso; Paolo, Spirito; G. F., Vitale; Giovanni, Busatto; Giuseppe, Cocorullo; G., Ferla; S., Musumeci
Impact of Donor Traps on the 2DEG and Electrical Behavior of AlGaN/GaN MISFETs
2014-01-01 Giorgia, Longobardi; Florin, Udrea; Stephen, Sque; Godefridus A. M., Hurkx; Jeroen, Croon; Napoli, Ettore; Jan, Sonsky
On the Crossing-Point of 4H-SiC Power Diodes Chararacteristics
2014-01-01 DI BENEDETTO, Luigi; Licciardo, GIAN DOMENICO; Roberta, Nipoti; Bellone, Salvatore
Optimized Design for 4H-SiC Power DMOSFET
2016-01-01 DI BENEDETTO, Luigi; Licciardo, GIAN DOMENICO; Erlbacher, T.; Bauer, A. J.; Rubino, Alfredo
Recombination Lifetime Profiling in Very Thin Silicon Epitaxial Layers used for Bipolar VLSI
1989-01-01 Paolo, Spirito; Bellone, Salvatore; C., Ransom; Giovanni, Busatto; Giuseppe, Cocorullo
Substrate Engineering for Improved Transient Breakdown Voltage in SOI Lateral Power MOS
2006-01-01 Napoli, Ettore; F., Udrea
Switching device based on a thin film of an azo containing polymer for application in memory cells.
2008-01-01 D., Attianese; Petrosino, Mario; P., Vacca; Concilio, Simona; Iannelli, Pio; Rubino, Alfredo; Bellone, Salvatore
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| A Measurement Method of the Injection Level Dependence of the Conductivity Mobility in Silicon | 1-gen-1995 | Bellone, Salvatore; GIAN VITO, Persiano; ANTONIO G. M., Strollo | |
| An Analysis of Thermal Behaviour of Bipolar-Mode JFET's | 1-gen-1983 | Bellone, Salvatore; Antonio, Caruso; Giovanni, Scarpetta; Paolo, Spirito; G. F., Vitale | |
| Design of IGBT with Integral Freewheeling Diode | 1-gen-2002 | Napoli, Ettore; Spirito, Paolo; Strollo, ANTONIO GIUSEPPE MARIA; F., Frisina; L., Fragapane; D., Fagone | |
| Detection of Recombination Centers in Epitaxial Layers by Temperature Scanning and Depth Lifetime Profiling | 1-gen-1991 | Bellone, Salvatore; Paolo, Spirito | |
| Duration of the High Breakdown Voltage Phase in Deep Depletion SOI LDMOS | 1-gen-2007 | Napoli, Ettore | |
| The Effect of Charge Imbalance on Superjunction Power Devices: An Exact Analytical Solution | 1-gen-2008 | Napoli, Ettore; H., Wang; F., Udrea | |
| Experimental measurements of Majority and Minority Carrier Lifetime Profile in Si- epilayers by the use of an improved OCVD method | 1-gen-2005 | Bellone, Salvatore; Licciardo, GIAN DOMENICO; S., Daliento; L., Mele | |
| High-Voltage Bipolar Model JFET with normally-off Characteristics | 1-gen-1985 | Bellone, Salvatore; Antonio, Caruso; Paolo, Spirito; G. F., Vitale; Giovanni, Busatto; Giuseppe, Cocorullo; G., Ferla; S., Musumeci | |
| Impact of Donor Traps on the 2DEG and Electrical Behavior of AlGaN/GaN MISFETs | 1-gen-2014 | Giorgia, Longobardi; Florin, Udrea; Stephen, Sque; Godefridus A. M., Hurkx; Jeroen, Croon; Napoli, Ettore; Jan, Sonsky | |
| On the Crossing-Point of 4H-SiC Power Diodes Chararacteristics | 1-gen-2014 | DI BENEDETTO, Luigi; Licciardo, GIAN DOMENICO; Roberta, Nipoti; Bellone, Salvatore | |
| Optimized Design for 4H-SiC Power DMOSFET | 1-gen-2016 | DI BENEDETTO, Luigi; Licciardo, GIAN DOMENICO; Erlbacher, T.; Bauer, A. J.; Rubino, Alfredo | |
| Recombination Lifetime Profiling in Very Thin Silicon Epitaxial Layers used for Bipolar VLSI | 1-gen-1989 | Paolo, Spirito; Bellone, Salvatore; C., Ransom; Giovanni, Busatto; Giuseppe, Cocorullo | |
| Substrate Engineering for Improved Transient Breakdown Voltage in SOI Lateral Power MOS | 1-gen-2006 | Napoli, Ettore; F., Udrea | |
| Switching device based on a thin film of an azo containing polymer for application in memory cells. | 1-gen-2008 | D., Attianese; Petrosino, Mario; P., Vacca; Concilio, Simona; Iannelli, Pio; Rubino, Alfredo; Bellone, Salvatore |
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