In this letter, the first experimental results of a recently proposed technique for measuring the carrier lifetime profile are presented. The technique makes use of a four-terminal bipolar test structure to electrically define the epilayer volume where recombination occurs and employs the open circuit voltage decay method for lifetime parameters extraction. For the capability of the test structure to depurate measurements from the parasitic ohmic effects, the technique is able to measure the ambipolar and minority carrier lifetime along epilayer at high and low injection levels respectively. Comparisons of measurements with numerical simulations are reported to confirm the validity of the proposed technique.
Experimental measurements of Majority and Minority Carrier Lifetime Profile in Si- epilayers by the use of an improved OCVD method
BELLONE, Salvatore;LICCIARDO, GIAN DOMENICO;
2005-01-01
Abstract
In this letter, the first experimental results of a recently proposed technique for measuring the carrier lifetime profile are presented. The technique makes use of a four-terminal bipolar test structure to electrically define the epilayer volume where recombination occurs and employs the open circuit voltage decay method for lifetime parameters extraction. For the capability of the test structure to depurate measurements from the parasitic ohmic effects, the technique is able to measure the ambipolar and minority carrier lifetime along epilayer at high and low injection levels respectively. Comparisons of measurements with numerical simulations are reported to confirm the validity of the proposed technique.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
