BELLONE, Salvatore
BELLONE, Salvatore
Dipartimento di Ingegneria Industriale/DIIN
85-440 K Temperature Sensor Based on a 4H-SiC Schottky Diode
2016 Rao, S.; DI BENEDETTO, Luigi; Pangallo, G.; Rubino, Alfredo; Bellone, Salvatore; Della Corte, F. G.
A 50W, 50MHz Conductivity Controlled Transistor
1980 Bellone, Salvatore; Antonio, Caruso; Paolo, Spirito; Gianfranco, Vitale; Giovanni, Soncini
A Circuital Model of Switching Behaviour of 4H-SiC p + -n-n + Diodes Valid at any Current and Temperature
2014 Bellone, Salvatore; F., Della Corte; DI BENEDETTO, Luigi; Licciardo, GIAN DOMENICO
A Circuital Model of Switching Behaviour of 4H-SiC P+-N-N+ Diodes Valid at any Current and Temperature
2013 Bellone, Salvatore; Francesco Della, Corte; DI BENEDETTO, Luigi; Licciardo, GIAN DOMENICO
A Measurement method of the ideal I-V characteristics of diodes up to the built-in voltage limit
1999 Bellone, Salvatore; Daliento, S.; Sanseverino, A.
A Measurement Method of the Injection Level Dependence of the Conductivity Mobility in Silicon
1995 Bellone, Salvatore; GIAN VITO, Persiano; ANTONIO G. M., Strollo
A Model of the ID-VGS Characteristics of Normally-Off 4H-SiC Bipolar JFETs
2014 Bellone, Salvatore; DI BENEDETTO, Luigi
A model of the off-behaviour of 4H–SiC power JFETs
2015 Bellone, Salvatore; DI BENEDETTO, Luigi; Licciardo, GIAN DOMENICO
A Model of the voltage barrier in the channel of 4H-SiC normally-off JFETs
2012 DI BENEDETTO, Luigi; Bellone, Salvatore
A new Measurement Technique for the Conductivity Mobility versus Injection Level in Silicon
1997 Bellone, Salvatore; Gianvito, Persiano; Antonio G. M., Strollo; Santolo, Daliento
A New Method for the Measurement of the Conductivity Mobility as a Function of the Injection Level in Silicon Regions
1995 Bellone, Salvatore; Gian Vito, Persiano; Antonio Giuseppe M., Strollo; Santolo, Daliento
A New Test Structure for in-depth Lifetime Profiling of Thin Si Epitaxial Layers
1989 Paolo, Spirito; Bellone, Salvatore; Craig M., Ransom; Giovanni, Busatto; Giuseppe, Cocorullo
A New Test Structure for Recombination Measurements in Thin Silicon Layers for VLSI Structures
1990 Bellone, Salvatore; Paolo, Spirito
A New Test Structure for the Evaluation of the Injection - Level Dependence of Carrier Mobilities
1996 Gian Vito, Persiano; Bellone, Salvatore
A Novel Measurement Method of the Spatial Carrier Lifetime Profile Based on the OCVD Technique
2004 Bellone, Salvatore; Licciardo, GIAN DOMENICO; Neitzert, Heinrich Christoph
A Quasi-one Dimensional Analysis of Vertical JFET Device Operated in the Bipolar Mode
1983 Bellone, Salvatore; Antonio, Caruso; Paolo, Spirito; G. F., Vitale
A Quasi-One-Dimensional Model of the Potential Barrier and Carrier Density in the Channel of Si and 4H-SiC BSITs
2012 Bellone, Salvatore; DI BENEDETTO, Luigi; Licciardo, GIAN DOMENICO
A Self-Consistent Model of the OCVD Behaviour of Si and 4H-SiC P+-N-N+ Diodes
2009 Bellone, Salvatore; Freda, Albanese; Licciardo, GIAN DOMENICO
A Self-consistent Model of the Static and Switching Behaviour of 4H-SiC Diodes
2010 Bellone, Salvatore; francesco della, Corte; DI BENEDETTO, Luigi; loredana freda, Albanese; Licciardo, GIAN DOMENICO
A Special Test Structure for the Measurement of the Injection Dependent Series Resistance of Power Diodes
1999 Bellone, Salvatore; Daliento, S.; Sanseverino, A.