BELLONE, Salvatore

BELLONE, Salvatore  

Dipartimento di Ingegneria Industriale/DIIN  

Mostra records
Risultati 1 - 20 di 99 (tempo di esecuzione: 0.017 secondi).
Titolo Data di pubblicazione Autore(i) File
85-440 K Temperature Sensor Based on a 4H-SiC Schottky Diode 1-gen-2016 Rao, S.; DI BENEDETTO, Luigi; Pangallo, G.; Rubino, Alfredo; Bellone, Salvatore; Della Corte, F. G.
A 50W, 50MHz Conductivity Controlled Transistor 1-gen-1980 Bellone, Salvatore; Antonio, Caruso; Paolo, Spirito; Gianfranco, Vitale; Giovanni, Soncini
A Measurement method of the ideal I-V characteristics of diodes up to the built-in voltage limit 1-gen-1999 Bellone, Salvatore; Daliento, S.; Sanseverino, A.
A Measurement Method of the Injection Level Dependence of the Conductivity Mobility in Silicon 1-gen-1995 Bellone, Salvatore; GIAN VITO, Persiano; ANTONIO G. M., Strollo
A Model of the ID-VGS Characteristics of Normally-Off 4H-SiC Bipolar JFETs 1-gen-2014 Bellone, Salvatore; DI BENEDETTO, Luigi
A Model of the voltage barrier in the channel of 4H-SiC normally-off JFETs 1-gen-2012 DI BENEDETTO, Luigi; Bellone, Salvatore
A new Measurement Technique for the Conductivity Mobility versus Injection Level in Silicon 1-gen-1997 Bellone, Salvatore; Gianvito, Persiano; Antonio G. M., Strollo; Santolo, Daliento
A New Method for the Measurement of the Conductivity Mobility as a Function of the Injection Level in Silicon Regions 1-gen-1995 Bellone, Salvatore; Gian Vito, Persiano; Antonio Giuseppe M., Strollo; Santolo, Daliento
A New Test Structure for in-depth Lifetime Profiling of Thin Si Epitaxial Layers 1-gen-1989 Paolo, Spirito; Bellone, Salvatore; Craig M., Ransom; Giovanni, Busatto; Giuseppe, Cocorullo
A New Test Structure for Recombination Measurements in Thin Silicon Layers for VLSI Structures 1-gen-1990 Bellone, Salvatore; Paolo, Spirito
A New Test Structure for the Evaluation of the Injection - Level Dependence of Carrier Mobilities 1-gen-1996 Gian Vito, Persiano; Bellone, Salvatore
A Quasi-one Dimensional Analysis of Vertical JFET Device Operated in the Bipolar Mode 1-gen-1983 Bellone, Salvatore; Antonio, Caruso; Paolo, Spirito; G. F., Vitale
A Quasi-One-Dimensional Model of the Potential Barrier and Carrier Density in the Channel of Si and 4H-SiC BSITs 1-gen-2012 Bellone, Salvatore; DI BENEDETTO, Luigi; Licciardo, GIAN DOMENICO
A Special Test Structure for the Measurement of the Injection Dependent Series Resistance of Power Diodes 1-gen-1999 Bellone, Salvatore; Daliento, S.; Sanseverino, A.
A Two-dimensional Analytical Model of Homojunction GaAs BMFET Structures 1-gen-1996 Bellone, Salvatore; Nicolo', Rinaldi; G. F., Vitale; Giuseppe, Cocorullo; G., Schweeger
Al+ Implanted Anode for 4H-SiC p-i-n Diodes 1-gen-2012 Roberta, Nipoti; DI BENEDETTO, Luigi; C., Albonetti; Bellone, Salvatore
An Analog Circuit for Accurate OCVD Measurements 1-gen-2008 Bellone, Salvatore; Licciardo, GIAN DOMENICO
An Analysis of Thermal Behaviour of Bipolar-Mode JFET's 1-gen-1983 Bellone, Salvatore; Antonio, Caruso; Giovanni, Scarpetta; Paolo, Spirito; G. F., Vitale
An Analytical Model for p+-n-n+ (n+-p-p+) Epitaxial Diodes Valid from Low to High Injection Levels 1-gen-1983 Bellone, Salvatore; Antonio, Caruso
AN ANALYTICAL MODEL OF AN OCVD-BASED MEASUREMENT TECHNIQUE OFTHE LOCAL CARRIER LIFETIME 1-gen-2007 Bellone, Salvatore; Licciardo, GIAN DOMENICO; Guerriero, G; Rubino, Alfredo