The performance of a 4H-SiC Schottky diode for thermal sensing in the wide temperature range from T=85 up to 443 K is presented. The linear dependence on temperature of the forward voltage drop, for different bias currents, is investigated through an analytical study of the temperature-dependent physical Schottky diode parameters. A high sensitivity of 1.18 mV/K was observed for a constant bias current of ID = 80 μA. The device exhibits a good degree of linearity with a calculated root mean square error, with respect to the best-linear fitting model, lower than 2.7 mV. Moreover, the proposed sensor shows a good repeatability maintaining a stable output over more cycles of measurements, from (down to) 85 up to (from) 443 K, in a long period of time.
85-440 K Temperature Sensor Based on a 4H-SiC Schottky Diode
DI BENEDETTO, LUIGI;RUBINO, Alfredo;BELLONE, Salvatore;
2016-01-01
Abstract
The performance of a 4H-SiC Schottky diode for thermal sensing in the wide temperature range from T=85 up to 443 K is presented. The linear dependence on temperature of the forward voltage drop, for different bias currents, is investigated through an analytical study of the temperature-dependent physical Schottky diode parameters. A high sensitivity of 1.18 mV/K was observed for a constant bias current of ID = 80 μA. The device exhibits a good degree of linearity with a calculated root mean square error, with respect to the best-linear fitting model, lower than 2.7 mV. Moreover, the proposed sensor shows a good repeatability maintaining a stable output over more cycles of measurements, from (down to) 85 up to (from) 443 K, in a long period of time.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
