We report low frequency noise measurements performed in patterned La0.7Sr0.3MnO3 (LSMO) thin films of various thicknesses (20 nm up to 200 nm) deposited onto SrTiO3 (STO) or buffered Silicon substrates. From an application point of view, the latter is very important because it demonstrates the possibility to integrate LSMO sensors or devices with standard industrial microelectronic circuits. The noise level in LSMO on buffered Si substrate is about 2 orders of magnitude higher than on STO substrates. Contact noise is also given.
Low frequency noise in La0.7Sr0.3MnO3 thin films: effects of substrate materials and contact resistance
Barone C.Writing – Review & Editing
;
2007-01-01
Abstract
We report low frequency noise measurements performed in patterned La0.7Sr0.3MnO3 (LSMO) thin films of various thicknesses (20 nm up to 200 nm) deposited onto SrTiO3 (STO) or buffered Silicon substrates. From an application point of view, the latter is very important because it demonstrates the possibility to integrate LSMO sensors or devices with standard industrial microelectronic circuits. The noise level in LSMO on buffered Si substrate is about 2 orders of magnitude higher than on STO substrates. Contact noise is also given.File in questo prodotto:
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