The characterization of III-V semiconductor films by contactless and non-invasive conductance and transient photoconductance measurements in the microwave frequency range were investigated. It was shown that the conductivity (of a GaSb film) and the majority carrier mobility (of GaAs and InP films) can be determined. Besides, information on charge carrier transport, in particular at the surface is obtained.

Characterization of InP and GaAs films by contactless transient photoconductivity measurements

NEITZERT, Heinrich Christoph;
2004

Abstract

The characterization of III-V semiconductor films by contactless and non-invasive conductance and transient photoconductance measurements in the microwave frequency range were investigated. It was shown that the conductivity (of a GaSb film) and the majority carrier mobility (of GaAs and InP films) can be determined. Besides, information on charge carrier transport, in particular at the surface is obtained.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11386/1723653
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