We report on electrical transport measurements and voltage-noise analysis in unreduced Nd1.83Ce0.17CuO4+d thin films. At low temperatures (T<100 K) the resistivity behavior is characterized by a metal-insulator crossover, which in these materials is usually interpreted in terms of weak localization induced by excess oxygen ions randomly distributed on apical impurity sites. The low-frequency voltage-spectral density reveals the presence of different conduction mechanisms in the metallic and in the insulating regions. Standard resistance fluctuations explain well the 1/ f noise at temperatures above the resistance minimum while an unusual linear dependence of the 1/ f noise on the applied bias current is found at lower temperatures, which could be interpreted as a signature of the occurrence of weak localization.

Weak localization and 1/f noise in Nd1.83Ce0.17CuO4+δ thin films

Barone C.
Writing – Original Draft Preparation
;
Guarino A.
Membro del Collaboration Group
;
Nigro A.
Membro del Collaboration Group
;
Romano A.
Formal Analysis
;
Pagano S.
Writing – Review & Editing
2009

Abstract

We report on electrical transport measurements and voltage-noise analysis in unreduced Nd1.83Ce0.17CuO4+d thin films. At low temperatures (T<100 K) the resistivity behavior is characterized by a metal-insulator crossover, which in these materials is usually interpreted in terms of weak localization induced by excess oxygen ions randomly distributed on apical impurity sites. The low-frequency voltage-spectral density reveals the presence of different conduction mechanisms in the metallic and in the insulating regions. Standard resistance fluctuations explain well the 1/ f noise at temperatures above the resistance minimum while an unusual linear dependence of the 1/ f noise on the applied bias current is found at lower temperatures, which could be interpreted as a signature of the occurrence of weak localization.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11386/2293603
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