Organic/inorganic heterojunctions have been fabricated by spin-coating of an oxadiazole based polyether on top of either n-type or p-type crystalline silicon substrates . The prepared heterodiodes showed good rectification. During currentvoltage measurements sharp current switching effects have been observed in the reverse bias characteristics for both types of heterodiodes. In particular a very stable hysteresis in the reverse characteristics of the polyether / n-type crystalline silicon has been measured at applied voltages below 1V. The application of this heterodiode as electrical memory with an on/off-ratio of about 2 orders of magnitude has been demonstrated.
|Titolo:||Electronic memory effect in a crystalline silicon/polyether heterostructure|
|Autori interni:||NEITZERT, Heinrich Christoph|
|Data di pubblicazione:||2010|
|Rivista:||PHYSICA STATUS SOLIDI. C|
|Appare nelle tipologie:||1.1.2 Articolo su rivista con ISSN|