We report on the successful growth of epitaxial Bi2Sr2CaCu2O8+delta/Bi2Sr2YCu2O8+delta/Bi2Sr2CaCu2O8+delta (2212/22Y2/2212) heterostructures using an in-situ de sputtering process at high oxygen pressures on (001) SrTiO3 substrates. The superconducting 2212 films have a zero resistance and a diamagnetic transition temperature at 87 K while the nonsuperconducting 22Y2 show a semiconductor-like behavior. The structural characterization showed the formation of highly oriented epitaxial films and heterostructures with the same crystalline structure. Conductance characteristics vs. voltage at low temperatures for 2212/22Y2/2212 junctions exhibit a change of slope indicative of a gap structure at about 30 mV, a zero-bias conductance peak as well as linear background conductance for voltages greater than 30 mV.
Epitaxial growth and properties of Bi-Sr-Ca-Cu-O based trilayer structures
BOBBA, Fabrizio;CUCOLO, Anna Maria;NIGRO, Angela;
1995-01-01
Abstract
We report on the successful growth of epitaxial Bi2Sr2CaCu2O8+delta/Bi2Sr2YCu2O8+delta/Bi2Sr2CaCu2O8+delta (2212/22Y2/2212) heterostructures using an in-situ de sputtering process at high oxygen pressures on (001) SrTiO3 substrates. The superconducting 2212 films have a zero resistance and a diamagnetic transition temperature at 87 K while the nonsuperconducting 22Y2 show a semiconductor-like behavior. The structural characterization showed the formation of highly oriented epitaxial films and heterostructures with the same crystalline structure. Conductance characteristics vs. voltage at low temperatures for 2212/22Y2/2212 junctions exhibit a change of slope indicative of a gap structure at about 30 mV, a zero-bias conductance peak as well as linear background conductance for voltages greater than 30 mV.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
