The growth of n-i-p and p-i-n amorphous hydrogenated silicon structures, as used in solar cells, has been followed by measuring the transient photoconductivity with contactless microwave reflection measurements. The signals in p-layers are much lower than in intrinsic or n-type material due to the increased electron decay rate. Influences of a thin n- or p-layer on the transient photoconductivity signals during growth of a subsequently deposited intrinsic layer are discussed. The optical interference fringes can be used for in-situ determination of the deposition rate during growth.

In-situ characterization of a-Si:H devices during growth by microwave detected transient photoconductivity

NEITZERT, Heinrich Christoph;
1991

Abstract

The growth of n-i-p and p-i-n amorphous hydrogenated silicon structures, as used in solar cells, has been followed by measuring the transient photoconductivity with contactless microwave reflection measurements. The signals in p-layers are much lower than in intrinsic or n-type material due to the increased electron decay rate. Influences of a thin n- or p-layer on the transient photoconductivity signals during growth of a subsequently deposited intrinsic layer are discussed. The optical interference fringes can be used for in-situ determination of the deposition rate during growth.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11386/3140415
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