Contactless measurements of the transient photoconductivity in a-Si:H and in a-Si1-xGex:H alloys are reported. A decrease of the effective electron mobility with increasing Ge content is observed. Because of a difference of dependence of the excitation density, two different processes are distinguished that lead to this decrease of the mobility. One is attributed to trapping and the other one leads to a decrease of the drift mobility. No increase of the recombination rate upon alloying of a-Si:H with Ge is observed as, on the contrary, the long-time decay in alloys is slower than in pure a-Si:H.
Transient photoconductivity of a-SiGe:H alloys
NEITZERT, Heinrich Christoph;
1991-01-01
Abstract
Contactless measurements of the transient photoconductivity in a-Si:H and in a-Si1-xGex:H alloys are reported. A decrease of the effective electron mobility with increasing Ge content is observed. Because of a difference of dependence of the excitation density, two different processes are distinguished that lead to this decrease of the mobility. One is attributed to trapping and the other one leads to a decrease of the drift mobility. No increase of the recombination rate upon alloying of a-Si:H with Ge is observed as, on the contrary, the long-time decay in alloys is slower than in pure a-Si:H.File in questo prodotto:
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