A planar waveguide based on an amorphous silicon-amorphous silicon carbide heterostructure is proposed for the realization of passive and active optical components at the wavelengths /spl lambda/=1.3-1.5 /spl mu/m. The waveguide has been realized by low temperature plasma enhanced chemical vapor deposition and is compatible with the standard microelectronic technologies. Thermo-optical induced modulation at /spl lambda/=1.5 /spl mu/m is demonstrated in this waveguide. Numerical simulations predict that operation frequencies of about 3 MHz are possible. The measurements have also allowed the determination of the previously unknown thermo-optical coefficient of undoped amorphous silicon at this wavelength.

Thermo-optical Modulation at λ=1.5 mm in an a-SiC/a-Si/a-SiC Planar Guided-Wave Structure

RUBINO, Alfredo;
1996

Abstract

A planar waveguide based on an amorphous silicon-amorphous silicon carbide heterostructure is proposed for the realization of passive and active optical components at the wavelengths /spl lambda/=1.3-1.5 /spl mu/m. The waveguide has been realized by low temperature plasma enhanced chemical vapor deposition and is compatible with the standard microelectronic technologies. Thermo-optical induced modulation at /spl lambda/=1.5 /spl mu/m is demonstrated in this waveguide. Numerical simulations predict that operation frequencies of about 3 MHz are possible. The measurements have also allowed the determination of the previously unknown thermo-optical coefficient of undoped amorphous silicon at this wavelength.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11386/3175077
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