Thin films of phosphorus doped μc-Si have been prepared in a glow discharge reactor starting from hydrogen diluted silane using less than 5 watt RF power. Conductivities as high as 41 S/cm have been measured on samples deposited at 210°C. The discharge parameters and reactor geometry will be examined in order to correlate the really dissipated RF power to the structural and electrical properties of the material. XRD, SEM, Raman spectroscopy and electrical characterization techniques have been used. All the samples show clusters that increase with the film thickness, while at the same time the crystallite size changes in the range 30–75 Å.

Structural and electrical properties of highly conductive μc-Si(P) layers

RUBINO, Alfredo;
1993

Abstract

Thin films of phosphorus doped μc-Si have been prepared in a glow discharge reactor starting from hydrogen diluted silane using less than 5 watt RF power. Conductivities as high as 41 S/cm have been measured on samples deposited at 210°C. The discharge parameters and reactor geometry will be examined in order to correlate the really dissipated RF power to the structural and electrical properties of the material. XRD, SEM, Raman spectroscopy and electrical characterization techniques have been used. All the samples show clusters that increase with the film thickness, while at the same time the crystallite size changes in the range 30–75 Å.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11386/3177877
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 0
  • ???jsp.display-item.citation.isi??? 1
social impact