We introduce the pulsed ruby laser as a new tool for omogeneous accelerated degradation of a-Si:H and discuss in detail the sample temperature during the ruby pulse and the value of the saturated density of states (DOS), achieved by this laser. The degradation dynamics and the saturated values of the DOS and electrical room temperature conductivity (sigma(RT)) are presented on a set of different undoped a-Si:H samples. It is illustrated that there is no correlation between the initial and light-saturated DOS, which is determined in addition to the H content and the a-Si:H microstructure indirectly also by impurities.

PULSED RUBY-LASER ACCELERATED DEGRADATION OF AMORPHOUS HYDROGENATED SILICON

RUBINO, Alfredo;
1993-01-01

Abstract

We introduce the pulsed ruby laser as a new tool for omogeneous accelerated degradation of a-Si:H and discuss in detail the sample temperature during the ruby pulse and the value of the saturated density of states (DOS), achieved by this laser. The degradation dynamics and the saturated values of the DOS and electrical room temperature conductivity (sigma(RT)) are presented on a set of different undoped a-Si:H samples. It is illustrated that there is no correlation between the initial and light-saturated DOS, which is determined in addition to the H content and the a-Si:H microstructure indirectly also by impurities.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11386/3178677
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