The transport properties of manganite thin films characterized by a weak-localization transition have been studied. Detailed voltage noise measurements show a specific 1/f noise spectrum below the transition temperature. A theoretical interpretation in terms of universal conductance fluctuations explains the nature of the unconventional electric noise, suggesting a direct connection between the weak-localization phenomenon and universal conductance fluctuations. The universal nature of the mechanism allows its detection in different systems under the weak-localization regime.

Universal origin of unconventional 1/f noise in the weak-localization regime

Barone C.;Romeo F.;Galdi A.;Maritato L.;Nigro A.;Pagano S.
2013

Abstract

The transport properties of manganite thin films characterized by a weak-localization transition have been studied. Detailed voltage noise measurements show a specific 1/f noise spectrum below the transition temperature. A theoretical interpretation in terms of universal conductance fluctuations explains the nature of the unconventional electric noise, suggesting a direct connection between the weak-localization phenomenon and universal conductance fluctuations. The universal nature of the mechanism allows its detection in different systems under the weak-localization regime.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11386/3968203
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