The voltage-spectral density SV(f) of the 2-dimensional electron gas formed at the interface of LaAlO3/SrTiO3 has been thoroughly investigated. The low-frequency component has a clear 1/f behavior with a quadratic bias current dependence, attributed to resistance fluctuations. However, its temperature dependence is inconsistent with the classical Hooge model, based on carrier-mobility fluctuations. The experimental results are, instead, explained in terms of carrier-number fluctuations, due to an excitation-trapping mechanism of the 2-dimensional electron gas.

Carrier-number fluctuations in the 2-dimensional electron gas at the LaAlO3/SrTiO3 interface

Barone C.
Writing – Original Draft Preparation
;
Romeo F.
Formal Analysis
;
Pagano S.
Writing – Original Draft Preparation
;
2013-01-01

Abstract

The voltage-spectral density SV(f) of the 2-dimensional electron gas formed at the interface of LaAlO3/SrTiO3 has been thoroughly investigated. The low-frequency component has a clear 1/f behavior with a quadratic bias current dependence, attributed to resistance fluctuations. However, its temperature dependence is inconsistent with the classical Hooge model, based on carrier-mobility fluctuations. The experimental results are, instead, explained in terms of carrier-number fluctuations, due to an excitation-trapping mechanism of the 2-dimensional electron gas.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11386/4228457
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