The voltage-spectral density SV(f) of the 2-dimensional electron gas formed at the interface of LaAlO3/SrTiO3 has been thoroughly investigated. The low-frequency component has a clear 1/f behavior with a quadratic bias current dependence, attributed to resistance fluctuations. However, its temperature dependence is inconsistent with the classical Hooge model, based on carrier-mobility fluctuations. The experimental results are, instead, explained in terms of carrier-number fluctuations, due to an excitation-trapping mechanism of the 2-dimensional electron gas.
|Titolo:||Carrier-number fluctuations in the 2-dimensional electron gas at the LaAlO3/SrTiO3 interface|
BARONE, CARLO [Writing – Original Draft Preparation] (Corresponding)
ROMEO, FRANCESCO [Formal Analysis]
PAGANO, Sergio [Writing – Original Draft Preparation]
|Data di pubblicazione:||2013|
|Appare nelle tipologie:||1.1.2 Articolo su rivista con ISSN|