We report the growth of epitaxial Pb(Zr0.54Ti0.46)O3 (PZT) thin films on yttriastabilized zirconia buffered silicon substrates by pulsed laser deposition. We demonstrate a full in plane epitaxy of the buffer layer, showing a RMS roughness of less than 0.3 nm for a 120 nm thick layer. This buffer layer allows the growth of fully (110) textured oxide conducting SrRuO3 and subsequent functional oxide layers. Here the Pb(Zr,Ti)O3 oxide was chosen to demonstrate its possible integration in piezoelectric microelectromechanical systems on silicon.
Epitaxial PZT thin films on YSZ-buffered Si (001) substrates for piezoelectric MEMS or NEMS applications
GALDI, ALICE;
2012-01-01
Abstract
We report the growth of epitaxial Pb(Zr0.54Ti0.46)O3 (PZT) thin films on yttriastabilized zirconia buffered silicon substrates by pulsed laser deposition. We demonstrate a full in plane epitaxy of the buffer layer, showing a RMS roughness of less than 0.3 nm for a 120 nm thick layer. This buffer layer allows the growth of fully (110) textured oxide conducting SrRuO3 and subsequent functional oxide layers. Here the Pb(Zr,Ti)O3 oxide was chosen to demonstrate its possible integration in piezoelectric microelectromechanical systems on silicon.File in questo prodotto:
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