A detailed characterization of the voltage-noise properties has been performed in FeTe0.5Se0.5 epitaxial thin films and Co-doped BaFe2As2 bilayers, deposited by pulsed laser deposition. In all the samples analyzed, the experimental voltage-spectral density has a 1/f noise component. Different behaviors are observed for the bias current and temperature dependencies of this 1/f noise, and are related to specific structural and electric transport properties of the two materials.
Temperature-dependent electric noise level in different iron-based superconductors
Barone C.
Writing – Original Draft Preparation
;Pagano S.Writing – Review & Editing
;
2014
Abstract
A detailed characterization of the voltage-noise properties has been performed in FeTe0.5Se0.5 epitaxial thin films and Co-doped BaFe2As2 bilayers, deposited by pulsed laser deposition. In all the samples analyzed, the experimental voltage-spectral density has a 1/f noise component. Different behaviors are observed for the bias current and temperature dependencies of this 1/f noise, and are related to specific structural and electric transport properties of the two materials.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
