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EnglishA 1300 nm InGaAsP laser diode, degraded after the application of high voltage ESD pulses in forward direction, showed after degradation a strong longitudinal mode suppression, resulting in a single mode emission spectrum identical to the one of a cleaved-coupled-cavity laser. The room temperature threshold current after ESD induced degradation increased by about 50 % and the differential quantum efficiency dropped substantially. However, even after degradation in a wide temperature range stable single mode laser operation has been achieved.
| Titolo: | Temperature dependent optoelectronic properties of a non-intentionally created cleaved-coupled-cavity laser |
| Autori: | |
| Data di pubblicazione: | 2014 |
| Rivista: | |
| Abstract: | A 1300 nm InGaAsP laser diode, degraded after the application of high voltage ESD pulses in forward direction, showed after degradation a strong longitudinal mode suppression, resulting in a single mode emission spectrum identical to the one of a cleaved-coupled-cavity laser. The room temperature threshold current after ESD induced degradation increased by about 50 % and the differential quantum efficiency dropped substantially. However, even after degradation in a wide temperature range stable single mode laser operation has been achieved. |
| Handle: | http://hdl.handle.net/11386/4423654 |
| Appare nelle tipologie: | 1.1.2 Articolo su rivista con ISSN |
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