This work presents pattern dependency of selective epitaxial growth of boron- or carbon-doped SiGe layers in recessed or unprocessed openings. The layer profile and quality of epi-layers were found to be dependent on chip layout and the growth parameters. Carbon- and boron-doping compensated the strain in SiGe layers and when both dopants are introduced the strain reduction was additive. The incorporation of boron and carbon in SiGe matrix showed to be a competitive action. The concentration of carbon decreased when the boron amount increased in SiGe layers with higher Ge content.

Selective Growth of B- and C-doped SiGe Layers in Unprocessed and Recessed Si Openings for pMOSFET Application

DI BENEDETTO, LUIGI;
2009

Abstract

This work presents pattern dependency of selective epitaxial growth of boron- or carbon-doped SiGe layers in recessed or unprocessed openings. The layer profile and quality of epi-layers were found to be dependent on chip layout and the growth parameters. Carbon- and boron-doping compensated the strain in SiGe layers and when both dopants are introduced the strain reduction was additive. The incorporation of boron and carbon in SiGe matrix showed to be a competitive action. The concentration of carbon decreased when the boron amount increased in SiGe layers with higher Ge content.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11386/4645524
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 0
  • ???jsp.display-item.citation.isi??? 0
social impact