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EnglishThis work presents pattern dependency of selective epitaxial growth of boron- or carbon-doped SiGe layers in recessed or unprocessed openings. The layer profile and quality of epi-layers were found to be dependent on chip layout and the growth parameters. Carbon- and boron-doping compensated the strain in SiGe layers and when both dopants are introduced the strain reduction was additive. The incorporation of boron and carbon in SiGe matrix showed to be a competitive action. The concentration of carbon decreased when the boron amount increased in SiGe layers with higher Ge content.
| Titolo: | Selective Growth of B- and C-doped SiGe Layers in Unprocessed and Recessed Si Openings for pMOSFET Application | |
| Autori: | ||
| Data di pubblicazione: | 2009 | |
| Abstract: | This work presents pattern dependency of selective epitaxial growth of boron- or carbon-doped SiGe layers in recessed or unprocessed openings. The layer profile and quality of epi-layers were found to be dependent on chip layout and the growth parameters. Carbon- and boron-doping compensated the strain in SiGe layers and when both dopants are introduced the strain reduction was additive. The incorporation of boron and carbon in SiGe matrix showed to be a competitive action. The concentration of carbon decreased when the boron amount increased in SiGe layers with higher Ge content. | |
| Handle: | http://hdl.handle.net/11386/4645524 | |
| Appare nelle tipologie: | 4.1.1 Proceedings con DOI |
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