UniSa - IRIS Institutional Research Information System
IRIS è la soluzione IT che facilita la raccolta e la gestione dei dati relativi alle attività e ai prodotti della ricerca. Fornisce a ricercatori, amministratori e valutatori gli strumenti per monitorare i risultati della ricerca, aumentarne la visibilità e allocare in modo efficace le risorse disponibili.
EnglishThis work presents pattern dependency of selective epitaxial growth of boron- or carbon-doped SiGe layers in recessed or unprocessed openings. The layer profile and quality of epi-layers were found to be dependent on chip layout and the growth parameters. Carbon- and boron-doping compensated the strain in SiGe layers and when both dopants are introduced the strain reduction was additive. The incorporation of boron and carbon in SiGe matrix showed to be a competitive action. The concentration of carbon decreased when the boron amount increased in SiGe layers with higher Ge content.
| Titolo: | Selective Growth of B- and C-doped SiGe Layers in Unprocessed and Recessed Si Openings for pMOSFET Application | |
| Autori: | ||
| Data di pubblicazione: | 2009 | |
| Abstract: | This work presents pattern dependency of selective epitaxial growth of boron- or carbon-doped SiGe layers in recessed or unprocessed openings. The layer profile and quality of epi-layers were found to be dependent on chip layout and the growth parameters. Carbon- and boron-doping compensated the strain in SiGe layers and when both dopants are introduced the strain reduction was additive. The incorporation of boron and carbon in SiGe matrix showed to be a competitive action. The concentration of carbon decreased when the boron amount increased in SiGe layers with higher Ge content. | |
| Handle: | http://hdl.handle.net/11386/4645524 | |
| Appare nelle tipologie: | 4.1.1 Proceedings con DOI |
File in questo prodotto:
http://hdl.handle.net/11386/4645524
Copyright © 2022